High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
暂无分享,去创建一个
[1] H. Amano,et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer , 1986 .
[2] Takashi Matsuoka,et al. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy , 1991 .
[3] N. Ōtsuka,et al. Room temperature blue light emitting p‐n diodes from Zn(S,Se)‐based multiple quantum well structures , 1992 .
[4] Shuji Nakamura,et al. Novel metalorganic chemical vapor deposition system for GaN growth , 1991 .
[5] Isamu Akasaki,et al. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE , 1989 .
[6] Takeshi Kuboyama,et al. Properties of Ga1-xInxN Films Prepared by MOVPE , 1989 .
[7] Takashi Mukai,et al. High-Quality InGaN Films Grown on GaN Films , 1992 .
[8] S. Nakamura,et al. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers , 1991 .
[9] Shuji Nakamura,et al. In Situ Monitoring of GaN Growth Using Interference Effects , 1991 .
[10] Takashi Mukai,et al. Cd-Doped InGaN Films Grown on GaN Films , 1993 .
[11] Arto V. Nurmikko,et al. Blue and green diode lasers in ZnSe‐based quantum wells , 1992 .
[12] H. Amano,et al. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) , 1989 .
[13] Takashi Mukai,et al. High-Power GaN P-N Junction Blue-Light-Emitting Diodes , 1991 .
[14] Takashi Mukai,et al. Hole Compensation Mechanism of P-Type GaN Films , 1992 .