A simple wide-band on-chip inductor model for silicon-based RF ICs

In this paper, we developed a simple wide-band inductor model that contains lateral substrate resistance and capacitance to model the decrease in the series resistance at high frequencies related to lateral coupling through the silicon substrate. The model accurately predicts the equivalent series resistance and inductance over a wide-frequency range. Since it has frequency-independent elements, the proposed model can be easily integrated in SPICE-compatible simulators. The proposed model has been verified with measured results of inductors fabricated in a 0.18-/spl mu/m six-metal CMOS process. We also demonstrate the validity of the proposed model for shielded inductors. The proposed model shows excellent agreement with measured data over the whole frequency range.

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