A 45 Gb/s, 98 fJ/bit, 0.02 mm2 Transimpedance Amplifier with Peaking-Dedicated Inductor in 65-nm CMOS
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Hidetoshi Onodera | Hideyuki Nosaka | Akira Tsuchiya | Naoki Miura | Kenji Tanaka | Akitaka Hiratsuka | Hiroyuki Fukuyama
[1] Shen-Iuan Liu,et al. CMOS wideband amplifiers using multiple inductive-series peaking technique , 2005, IEEE Journal of Solid-State Circuits.
[2] Jun-De Jin,et al. A Miniaturized 70-GHz Broadband Amplifier in 0.13- m CMOS Technology , 2008 .
[3] Joohwa Kim,et al. A 40-Gb/s Optical Transceiver Front-End in 45 nm SOI CMOS , 2012, IEEE Journal of Solid-State Circuits.
[4] Sung Min Park,et al. A 50-Gb/s differential transimpedance amplifier in 65nm CMOS technology , 2014, 2014 IEEE Asian Solid-State Circuits Conference (A-SSCC).
[5] Thomas H. Lee,et al. The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES , 2003 .
[6] Yoichi Koyanagi,et al. 22.2 A 25Gb/s hybrid integrated silicon photonic transceiver in 28nm CMOS and SOI , 2015, 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers.
[7] Hau-Yiu Tsui,et al. An on-chip vertical solenoid inductor design for multigigahertz CMOS RFIC , 2005, IEEE Transactions on Microwave Theory and Techniques.
[8] Calvin Plett,et al. A 40 Gb/s transimpedance amplifier in 65 nm CMOS , 2010, Proceedings of 2010 IEEE International Symposium on Circuits and Systems.
[9] Tanaka Shinsuke,et al. A 25Gb/s Hybrid Integrated Silicon Photonic Transceiver in 28nm CMOS and SOI , 2015 .