Direct observation of very slow traps after homogeneous charge injection in MOS capacitors

Abstract A modification of the quasistatic CV-method is presented which allows the charging time of very slow traps to be measured and slow and fast interface states in a metal-oxide-semiconductor (MOS) system to be distinguished. Applying this method to MOS capacitors after Fowler Nordheim charge injection gives strong evidence that in addition to fast interface states very slow traps are created near the semiconductor interface. These are charged by tunnelling rather than a thermally activated processes.