论文信息 - InP/GaAsSb/InP multifinger DHBTs for power applications

InP/GaAsSb/InP multifinger DHBTs for power applications

We report the performances of multifinger GaAsSb/InP double heterojunction bipolar transistors (DHBTs) designed for high power applications. 2-finger 15times1 mum2 devices demonstrate maximum fT of 221 GHz and maximum fmax of 293 GHz when biased at JC = 370 kA/cm2 and VCE = 1.4V. Moreover we investigate the limitation of frequency performances with the number of fingers.

[2] W. Fawcett,et al. Temperature dependence of the velocity/field characteristic of electrons in InP , 1975 .

[3] M. Urteaga,et al. W-band InP/InGaAs/InP DHBT MMIC power amplifiers , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[4] S. P. Watkins,et al. 300 GHz InP/GaAsSb/InP Double HBTs with High Current Capability and V , 2001 .

[5] D. Rensch,et al. AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications , 1995, Proceedings of International Electron Devices Meeting.

[6] a1 Properties and Thermal nstabilities o ased Heterojunction Bipolar Transistors , 1996 .