Argon-induced Auger emission from amorphous and crystalline silicon: A comparison between experiment and simulation

[1]  D. J. O'connor,et al.  The role of the electronic structure in charge exchange between low energy ions and surfaces , 1988 .

[2]  J. Faure,et al.  Topographie de surfaces Si(111) après bombardement d'ions Ar+ et recuit thermique , 1987 .

[3]  G. Carter,et al.  The influence of dose rate and implantation temperature on the damage produced by N+ ion irradiation of silicon , 1987 .

[4]  L. M. Howe,et al.  Heavy ion damage in silicon and germanium , 1987 .

[5]  M. Hou,et al.  Incidence angle and ion energy dependences of absolute Al L23 Auger yields in Ar+-Al collisions: Experiments and computer simulations , 1986 .

[6]  C. Powell The energy dependence of electron attenuation lengths , 1985 .

[7]  J. Linnros,et al.  Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire , 1984 .

[8]  N. Stolterfoht,et al.  Total cross sections for L -shell Auger-electron production and vacancy production in slow Si-Ar collisions , 1983 .

[9]  J. Fine,et al.  Auger electron emission from the decay of collisionally-excited atoms sputtered from Al and Si , 1983 .

[10]  D. J. O'connor,et al.  Surface science lettersSi charge exchange with a clean Si surface , 1980 .

[11]  Marc Hou,et al.  Computer studies of low energy scattering in crystalline and amorphous targets , 1976 .

[12]  Mark T. Robinson,et al.  Computer studies of the reflection of light ions from solids , 1976 .

[13]  Mark T. Robinson,et al.  Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation , 1974 .

[14]  V. M. Gusev,et al.  On silicon amorphization during different mass ion implantation , 1973 .

[15]  E. J. Mcguire,et al.  Atomic L-Shell Coster-Kronig, Auger, and Radiative Rates and Flourescence Yields for Na-Th , 1972 .

[16]  F. Morehead,et al.  Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose , 1972 .

[17]  S. T. Picraux,et al.  Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering , 1968 .

[18]  O. Firsov Calculation of the Interaction Potential of Atoms , 1958 .

[19]  Homer D. Hagstrum,et al.  Theory of Auger Ejection of Electrons from Metals by Ions , 1954 .