Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal β–Ga2O3

Single crystals of transition metal (TM) doped β–Ga2O3, a wide gap semiconductor system of interest for transparent conductive oxide and diluted magnetic semiconductor applications, have been studied in the dilute, non-interacting limit (≤0.06 cation %). Based on optical absorption, particle induced x-ray emission, and Rutherford backscattering measurements, Mn does not incorporate as well as Cr, and Mn degrades the crystal quality. Using superconducting quantum interference device (SQuID) magnetometry, a Brillouin type paramagnetic magnetization is observed for Mn or Cr doped crystals with an effective number of Bohr magnetons per TM ion of 5.88 ± 0.1 or 3.95 ± 0.1, respectively. A trace ferromagnetic signal is consistent with a very small concentration of secondary phases in the Mn-doped crystal. The position of the edge in x-ray absorption near edge structure (XANES) measurements suggests that the Cr takes the 3+ valence, while a mixture of Mn2+ and Mn3+ are present; based on the absence of a prominent...

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