ELECTROLUMINESCENCE AND CARRIER TRANSPORT OF SIO2 FILM CONTAINING DIFFERENT DENSITY OF GE NANOCRYSTALS

Luminescent SiO2 films containing Ge nanocrystals (nc-Ge) are synthesized by implanting Ge ions into SiO2 films thermally grown on crystalline silicon, and the nc-Ge density was controlled by Ge+ implantation doses. The current–voltage measurements of their metal–oxide–semiconductor structures illustrate that the density and the distribution of nc-Ge have significant effects on their electroluminescence and carrier transport. The temperature-dependent current behavior is weaker in the films with low density, but stronger in the films with high density. Electroluminescent spectra indicate that high electric field can be established only in the films with low density.

[1]  J. R. Zhang,et al.  ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GE+-IMPLANTED SIO2 FILMS THERMALLY GROWN ON CRYSTALLINE SILICON , 1997 .

[2]  D. Dimaria,et al.  High current injection into SiO2 from Si rich SiO2 films and experimental applications , 1980 .

[3]  Thomas N. Theis,et al.  Electroluminescence studies in silicon dioxide films containing tiny silicon islands , 1984 .

[4]  Y. Ye,et al.  Synthesis of Ge nanocrystals in thermal SiO2 films by Ge+ ion implantation , 1998 .

[5]  Karl Leo,et al.  Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers , 1997 .

[6]  Yoshihiko Kanemitsu,et al.  Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices , 1991 .

[7]  V. Craciun,et al.  Light emission from germanium nanoparticles formed by ultraviolet assisted oxidation of silicon‐germanium , 1996 .

[8]  H. Rinnert,et al.  Intense visible photoluminescence in amorphous SiOx and SiOx:H films prepared by evaporation , 1998 .

[9]  D. Paine,et al.  Visible photoluminescence from nanocrystalline Ge formed by H2 reduction of Si0.6Ge0.4O2 , 1993 .

[10]  Keiichi Yamamoto,et al.  Growth of Ge Microcrystals in SiO2 Thin Film Matrices: A Raman and Electron Microscopic Study , 1991 .

[11]  P. Fauchet,et al.  Carrier transport in porous silicon light‐emitting devices , 1996 .

[12]  Eduard A. Cartier,et al.  Anode hole injection and trapping in silicon dioxide , 1996 .

[13]  K. D. Kolenbrander,et al.  Carrier transport in thin films of silicon nanoparticles , 1997 .

[14]  J. Luck,et al.  The electrical conductivity of binary disordered systems, percolation clusters, fractals and related models , 1990 .

[15]  K. D. Hirschman,et al.  Silicon-based visible light-emitting devices integrated into microelectronic circuits , 1996, Nature.

[16]  M. Lampert,et al.  Current injection in solids , 1970 .

[17]  Kelvin G. Lynn,et al.  Effect of different preparation conditions on light emission from silicon implanted SiO2 layers , 1996 .

[18]  Wolfgang Skorupa,et al.  Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films , 1997 .

[19]  K. Vahala,et al.  Electroluminescence and photoluminescence of Ge‐implanted Si/SiO2/Si structures , 1995 .

[20]  M. Nogami,et al.  Sol‐gel method for synthesizing visible photoluminescent nanosized Ge‐crystal‐doped silica glasses , 1994 .

[21]  J. R. Zhang,et al.  Blue and red photoluminescence from Ge+ implanted SiO2 films and its multiple mechanism , 1998 .

[22]  L. Canham.  Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers , 1990 .