Development of FET-Type Reference Electrodes for pH-ISFET Applications

A reference field effect transistor FET fabrication method by using a perfluorosulfonated proton exchange membrane associated with ion-insensitive polymers is proposed. The single-layer film of the perfluorosulfonated polymer/photoresist composite among the eight films tested demonstrated the best performance of 5.8 mV/pH and 11.27 mV/pNa sensitivities. Meanwhile, the drift performances were 3.5 mV/h and less than 1 mV/h for the first and second 4 h tests. A high sensitivity of 52.1 mV/pH and a low interference of 4.61 mV/pNa were obtained in the range of pH 1–13 through the differential arrangement with ZrO2 gate ion-sensitive field-effect transistors ISFETs . Meanwhile, the transconductance match of the proposed reference FET/ISFET pair would simplify the differential readout circuits. © 2010 The Electrochemical Society. DOI: 10.1149/1.3355904 All rights reserved.

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