论文信息 - Near Room‐Temperature Memory Devices Based on Hybrid Spin‐Crossover@SiO2 Nanoparticles Coupled to Single‐Layer Graphene Nanoelectrodes - 字舞流文

Near Room‐Temperature Memory Devices Based on Hybrid Spin‐Crossover@SiO2 Nanoparticles Coupled to Single‐Layer Graphene Nanoelectrodes

E. Coronado | M. Giménez‐Marqués | H. V. D. van der Zant | R. Torres-Cavanillas | A. Holovchenko | J. Dugay | H. S. van der Zant | Julien Dugay