Modeling of a floating-gate EEPROM cell using a charge sheet approach
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[1] P. Liu,et al. A theoretical model for the current-voltage characteristics of a floating-gate EEPROM cell , 1993 .
[2] Rachid Bouchakour,et al. Extraction of Fowler-Nordheim parameters of thin SiO/sub 2/ oxide film including polysilicon gate depletion: validation with an EEPROM memory cell , 2000, 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353).
[3] Y. Tsividis. Operation and modeling of the MOS transistor , 1987 .
[4] J. Brews. A charge-sheet model of the MOSFET , 1978 .
[5] R. Bouchakour,et al. Improvement of EEPROM cell reliability by optimization of signal programming , 2001 .
[6] M. Lenzlinger,et al. Fowler‐Nordheim Tunneling into Thermally Grown SiO2 , 1969 .
[7] W. Benzerti,et al. An analytical damaged submicron MOSFET model for CAD applications , 1997, Proceedings of 40th Midwest Symposium on Circuits and Systems. Dedicated to the Memory of Professor Mac Van Valkenburg.