论文信息 - Efficiency improvement for micro light-emitting diodes with n-doped quantum barriers and single QW

Efficiency improvement for micro light-emitting diodes with n-doped quantum barriers and single QW

In this article, efficiency performance of blue GaN/InGaN micro light emitting diodes (μ-LEDs) are investigated as functions of chip sizes, quantum barrier doping level and the number of quantum wells (QWs) by simulation. Internal quantum efficiency (IQE) and external quantum efficiency (EQE) drastically decrease with decreasing mesa sizes of μ-LEDs. The simulation indicates that μ-LEDs with n-doped quantum barriers can effectively suppress the Shockley-Read-Hall (SRH) nonradiative recombination and improve the efficiency compared to those with intrinsic quantum barriers in small μ-LEDs. The simulated results also show that decreasing the number of QWs can improve the IQE of μ-LEDs with higher radiative recombination rate in a single QW. An optimized design for 5×5 μm2 GaN/InGaN μ-LEDs with n-doped barriers and a single QW shows around 367% efficiency improvement at 1 A/cm2 comparing to the conventional intrinsic multiple QWs-based design in simulation.

Dayan Ban | Jian Yin | D. Ban | Jian Yin

[1] W. Read,et al. Statistics of the Recombinations of Holes and Electrons , 1952 .

[2] Patrick Degenaar,et al. Micro-LED arrays: a tool for two-dimensional neuron stimulation , 2008 .

[3] T. Hsu,et al. Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes , 2010, IEEE Journal of Quantum Electronics.

[4] Hongxing Jiang,et al. III-Nitride full-scale high-resolution microdisplays , 2011 .

[5] François Templier,et al. Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications , 2017, OPTO.

[6] T. C. McGill,et al. Minority carrier diffusion length and lifetime in GaN , 1998 .

[7] T. C. McGill,et al. Electron diffusion length and lifetime in p-type GaN , 1998 .

[8] Sang-Won Kang,et al. Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes , 2010 .

[9] Y. Kuo,et al. Carrier Transportation and Internal Quantum Efficiency of Blue InGaN Light-Emitting Diodes With $P$-Doped Barriers , 2010, IEEE Photonics Technology Letters.

[10] C. Palacio,et al. Direct grafting of long-lived luminescent indicator dyes to GaN light-emitting diodes for chemical microsensor development. , 2011, ACS applied materials & interfaces.