Design and performance of UHF and L-band oscillators using thin-film resonators on semiconductor substrates

The authors report on the use of sputter-deposited, thin-film, aluminum nitride resonators as the feedback element in hybrid single-mode, combline, and voltage-controlled UHF and L-band oscillators. The resonators have also been cointegrated on the same substrate with 2-GHz BJTs (bipolar junction transistors). Design techniques and suggestions for novel architectures using this technology are presented.<<ETX>>