Temperature operation of FDSOI devices with metal gate (TaSiN) and high-k dielectric
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[1] J. Conner,et al. Fully-depleted SOI devices with TaSiN gate, HfO2 gate dielectric, and elevated source/drain extensions , 2003, IEEE Electron Device Letters.
[2] M. Haond,et al. SON (Silicon-On-Nothing) P-MOSFETs with totally silicided (CoSi/sub 2/) polysilicon on 5 nm-thick Si-films: the simplest way to integration of metal gates on thin FD channels , 2002, Digest. International Electron Devices Meeting,.
[3] Kok Wai Wong,et al. Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation , 2002, Digest. International Electron Devices Meeting,.
[4] G. Groeseneken,et al. Temperature dependence of threshold voltage in thin-film SOI MOSFETs , 1990, IEEE Electron Device Letters.
[5] M.-R. Lin,et al. Nickel silicide metal gate FDSOI devices with improved gate oxide leakage , 2002, Digest. International Electron Devices Meeting,.
[6] S. Li,et al. Electrical Characterization of Silicon-On-Insulator Materials and Devices , 1995 .