Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices
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Jing Wang | Basanth Jagannathan | Hongmei Li | Susan L. Sweeney | Jesús A. del Alamo | Usha Gogineni | B. Jagannathan | S. Sweeney | U. Gogineni | J. Alamo | Jing Wang | Hongmei Li
[1] B. Jagannathan,et al. Effect of substrate contact shape and placement on RF characteristics of 45 nm low power CMOS devices , 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.
[2] R. Wachnik,et al. RF Modeling of 45nm Low-Power CMOS Technology , 2009 .
[3] In Man Kang,et al. Scalable Model of Substrate Resistance Components in RF MOSFETs With Bar-Type Body Contact Considered Layout Dimensions , 2009, IEEE Electron Device Letters.
[4] J. Scholvin,et al. Fundamental Power and Frequency Limits of Deeply-Scaled CMOS for RF Power Applications , 2006, 2006 International Electron Devices Meeting.
[5] M.J. Deen,et al. MOSFET modeling for RF IC design , 2005, IEEE Transactions on Electron Devices.
[6] R.W. Brodersen,et al. Millimeter-wave CMOS design , 2005, IEEE Journal of Solid-State Circuits.
[7] J. Laskar,et al. A new analytical scalable substrate network model for RF MOSFETs , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).
[8] K. Mayaram,et al. A layout dependent and bias independent scalable substrate model for CMOS RF transistors , 2002, Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573).
[9] Hans Hjelmgren,et al. Small-signal substrate resistance effect in RF CMOS identified through device simulations , 2001 .
[10] K. F. Lee,et al. Impact of distributed gate resistance on the performance of MOS devices , 1994 .
[11] N. Camilleri,et al. Extracting small-signal model parameters of silicon MOSFET transistors , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).