An X-band high-power amplifier using SiGe/Si HBT and lumped passive components

We report the design and fabrication of a compact microwave monolithic integrated circuit (MMIC) amplifier, which demonstrates high output power at X-Band. A single-stage power amplifier is demonstrated, with a double-mesa type SiGe/Si HBT as the active device and spiral inductors and MIM capacitors as lumped passive components. At 8.4 GHz, a linear gain of 8.7 dB, an output power at peak efficiency of 23 dBm, and a saturated output power P/sub sat/ of 25 dBm, are measured. To our knowledge, this is the first MMIC X-Band power amplifier using SiGe/Si HBTs.

[1]  Zhenqiang Ma,et al.  A high-power and high-gain X-band Si/SiGe/Si heterojunction bipolar transistor , 2002 .

[3]  Hermann Schumacher,et al.  Enhanced SiGe heterojunction bipolar transistors with 160 GHz-f/sub max/ , 1995, Proceedings of International Electron Devices Meeting.

[4]  H. Schumacher,et al.  Class-A SiGe HBT power amplifiers at C-band frequencies , 1995, IEEE Microwave and Guided Wave Letters.

[5]  Liang-Hung Lu,et al.  X- and Ku-band amplifiers based on Si/SiGe HBT's and micromachined lumped components , 1998 .

[6]  K. Washio,et al.  130-GHz f/sub T/ SiGe HBT technology , 1997, International Electron Devices Meeting. IEDM Technical Digest.