Far-Infrared−Ultraviolet Dielectric Function, Lattice Vibration, and Photoluminescence Properties of Diluted Magnetic Semiconductor Sn1−xMnxO2/c-Sapphire Nanocrystalline Films

Optical properties of Sn1−xMnxO2 (x from 0.0 to 0.15) nanocrystalline films grown on c-plane sapphire substrates have been investigated at room temperature by ultraviolet-infrared transmittance, far-infrared reflectance, and photoluminescence spectra. The X-ray diffraction analysis indicate that the films are of tetragonal rutile structure except for 5% Mn doping, in which the slight orthorhombic phase appears due to the presence of defects and strain. The dielectric functions are successfully determined from 0.025 to 6.5 eV using the Adachi and Lorentz multioscillator dispersion models in the high and low photon energy regions, respectively. The fundamental absorption edge is found to shift toward a lower energy side with increasing Mn composition. The refractive index of pure SnO2 film is estimated to be the lowest among the Sn1−xMnxO2 system. On the other hand, the low Eu transverse optical (TO) phonon frequencies slightly increase with the Mn composition. However, the highest Eu(TO) and A2u(TO) vibrat...