Quenching-dependent reversible modification of electronic structure of proton-implanted silicon
暂无分享，去创建一个
[1] B. Mukashev,et al. Comparison of electronic structure and properties of hydrogen-associated and thermal double donors in silicon , 2000 .
[2] S. Bernstorff,et al. Grazing-incidence small-angle and wide-angle scattering of synchrotron radiation on nanosized CeO2 thin films , 1999 .
[3] B. Mukashev,et al. EXCITED STATES OF A HYDROGEN-INTRINSIC DEFECT-RELATED DOUBLE DONOR IN SILICON , 1998 .
[4] B. Mukashev,et al. IR Studies of Si-H Bond-Bending Vibrational Modes in Si , 1997 .
[5] Weber,et al. Shallow hydrogen-related donors in silicon. , 1993, Physical review. B, Condensed matter.
[6] Yu.V. Gorelkinskii,et al. Electron paramagnetic resonance of hydrogen in silicon , 1991 .
[7] V. Frolov,et al. Hydrogen Implantation into Silicon. Infra‐Red Absorption Spectra and Electrical Properties , 1985 .
[8] N. N. Nevinnyi,et al. Reversible transformation of defects in hydrogen-implanted silicon , 1983 .
[9] Y. Ohmura,et al. Electrical properties of n-type Si layers doped with proton bombardment induced shallow donors , 1972 .
[10] G. D. Watkins,et al. Radiation effects in semiconductors , 1971 .