Effect of polarization and self-energy on the ground donor state in the presence of conduction band nonparabolicity in GaAs–(Al,Ga)As spherical quantum dot

Based on the variational technique, the binding energy associated with the ground donor state in the presence of conduction band nonparabolicity, polarization charge, and self-energy is estimated for a finite-barrier quantum dot, with a hydrogenic impurity located at its center. The overall effect of the conduction band nonparabolicity, polarization charge, and self-energy is found to enhance the ground state binding energy, their influences being most prominent in small dots with high barriers.

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