Compact GaN MMIC T/R module front-end for X-band pulsed radar

An X-band Single-Chip monolithic microwave integrated circuit (MMIC) has been developed by using a European GaN HEMT technology. The very compact MMIC die occupying only an area of 3.0 mm × 3.0 mm, integrates a high power amplifier (HPA), a low-noise amplifier (LNA) and a robust asymmetrical absorptive/reflective SPDT switch. At the antenna RF pad in the frequency range from 8.6 to 11.2 GHz, nearly 8 W of output power and 22 dB of linear gain were measured when operated in transmit mode. When operated in receive mode, a noise figure of 2.5 dB with a gain of 15 dB were measured at the Rx RF pad in the same frequency range.

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