Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se+ and 1 MeV Al+ ions
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C. Paulmann | A. Turos | R. Ratajczak | W. Wierzchowski | K. Wieteska | A. Stonert | P. Jóźwik | K. Mazur | R. Wilhelm | S. Akhamadaliev
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