论文信息 - High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3 gate stack - 字舞流文

High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3 gate stack

K. Bourdelle | J. Hartmann | S. Mantl | Qing-Tai Zhao | D. Buca | R. Minamisawa | M. Schmidt | J. Lopes | E. D. Özben | J. Schubert