论文信息 - Low frequency and microwave characterization of submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular‐beam epitaxy - 字舞流文

Low frequency and microwave characterization of submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular‐beam epitaxy

J. B. Kuang | P. Tasker | L. Eastman | W. Schaff | Young-Kai Chen | H. Hier | O. Aina | G. W. Wang | A. Fathimulla | S. Ratanaphanyarat