Predicting diode laser performance

Predictions of the threshold current density of GaAs/AlGaAs graded refractive index (GRIN), separate confinement heterostructure (SCH), single potential well (SW) diode lasers at 25 degree(s)C and 125 degree(s)C using strict k-selection theory are made. A reasonable fit to the experimental data at both temperatures can be obtained without including carrier scattering. It is concluded that good predictions of threshold current density and differential quantum efficiency can be made provided one knows how to predict the temperature dependence of internal quantum efficiency.