论文信息 - Analysis of Si–Ge Source Structure in 0.15 µm SOI MOSFETs Using Two-Dimensional Device Simulation - 字舞流文

Analysis of Si–Ge Source Structure in 0.15 µm SOI MOSFETs Using Two-Dimensional Device Simulation

K. Matsuzawa | M. Terauchi | N. Shigyo | O. Arisumi | Akira Nishiyama Akira Nishiyama | Makoto Yoshimi Makoto Yoshimi