Variability in nanoscale CMOS technology
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[1] S. De Gendt,et al. Estimation of fixed charge densities in hafnium-silicate gate dielectrics , 2006, IEEE Transactions on Electron Devices.
[2] O. Rozeau,et al. High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding , 2008, 2008 IEEE International Electron Devices Meeting.
[3] T. Tanaka,et al. Vth fluctuation induced by statistical variation of pocket dopant profile , 2000 .
[4] K. Endo,et al. On the gate-stack origin threshold voltage variability in scaled FinFETs and multi-FinFETs , 2010, 2010 Symposium on VLSI Technology.
[5] Hongfa Luan,et al. On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-$k$ Dielectrics , 2006, IEEE Electron Device Letters.
[6] Kelin J. Kuhn,et al. CMOS transistor scaling past 32nm and implications on variation , 2010, 2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
[7] P. Stolk,et al. Modeling statistical dopant fluctuations in MOS transistors , 1998 .
[8] M.J.M. Pelgrom,et al. Matching properties of MOS transistors , 1989 .
[9] J. Steigerwald. Chemical mechanical polish: The enabling technology , 2008, 2008 IEEE International Electron Devices Meeting.
[10] S. Uppal,et al. Modeling of the Threshold Voltage in Strained $\hbox{Si/Si}_{1 - x} \hbox{Ge}_{x}/\hbox{Si}_{1 - y}\hbox{Ge}_{y}(x \geq y)$ CMOS Architectures , 2007, IEEE Transactions on Electron Devices.
[11] S. Aur,et al. Comparative evaluation of gap-fill dielectrics in shallow trench isolation for sub-0.25 /spl mu/m technologies , 1996, International Electron Devices Meeting. Technical Digest.
[12] J. Jopling,et al. High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).
[13] Y. Nishi,et al. Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).
[14] T. Ono,et al. Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current , 2001 .
[15] H. Kimura,et al. RTA-Driven Intra-Die Variations in Stage Delay, and Parametric Sensitivities for 65nm Technology , 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
[16] A. Asenov,et al. Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture , 2007, IEEE Transactions on Electron Devices.
[17] Kelin Kuhn,et al. Managing Process Variation in Intel’s 45nm CMOS Technology , 2008 .
[18] A. Toffoli,et al. Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond , 2010, 2010 Symposium on VLSI Technology.
[19] A. Asenov,et al. Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness , 2003 .
[20] T. Hiramoto,et al. A new methodology for evaluating VT variability considering dopant depth profile , 2006, 2009 Symposium on VLSI Technology.
[21] Tetsu Tanaka,et al. V/sub th/ fluctuation induced by statistical variation of pocket dopant profile , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
[22] Borivoje Nikolic,et al. Measurement and Analysis of Variability in 45 nm Strained-Si CMOS Technology , 2009, IEEE Journal of Solid-State Circuits.
[23] Sarah H. Olsen,et al. Modeling of the Threshold Voltage in Strained , 2007 .
[24] Luigi Capodieci. From optical proximity correction to lithography-driven physical design (1996-2006): 10 years of resolution enhancement technology and the roadmap enablers for the next decade , 2006, SPIE Advanced Lithography.
[25] T. Fukai,et al. Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies , 2007, 2007 IEEE International Electron Devices Meeting.
[26] E. Seevinck,et al. Static-noise margin analysis of MOS SRAM cells , 1987 .
[27] Ying Zhang,et al. A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power management , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.
[28] Marcel J. M. Pelgrom,et al. Matching properties of MOS transistors , 1989 .
[29] A. Toriumi,et al. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's , 1994 .
[30] J. Bonnouvrier,et al. Competitive and cost effective high-k based 28nm CMOS technology for low power applications , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).
[31] A. Asenov. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFET's: A 3-D "atomistic" simulation study , 1998 .
[32] M. D. Giles,et al. Process Technology Variation , 2011, IEEE Transactions on Electron Devices.