Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics
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Y. Arakawa | E. Augendre | L. Clavelier | M. Nishioka | D. Bordel | D. Guimard | K. Kawaguchi | M. Rajesh | S. Faure