论文信息 - Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes - 字舞流文

Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes

Jenshan Lin | F. Ren | S. Pearton | Y. Liao | Yen‐Ting Chen | M. Tadjer | A. Kuramata | Chin-Wei Chang | Jiancheng Yang