Optimization of a Gate Distribution Layout to Compensate the Current Imbalance Generated by the 3D Geometry of a Railway Inverter

The impact of the stray inductances originated from interconnects in power electronics becomes crucial with the next generation of SiC devices. This paper shows that the existing layout of a railway inverter, operating with Si IGBTs already exhibits a dynamic current imbalance between paralleled modules. This will not allow using this geometry with SiC MOSFETs. A complete investigation of the electromagnetic origin of this issue has been performed. A generic circuit model has been proposed to establish a cabling rule to design a Gate Distribution Printed Circuit Board (PCB) in such a way that it compensates the power dissymmetry. An optimization strategy has been used to obtain a new geometry of this PCB, which has been validated with a time domain simulation.

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