Recent advances in Ga1−xInxSb/InAs superlattice IR detector materials
暂无分享,去创建一个
David H. Chow | M. H. Young | A. T. Hunter | A. Hunter | D. Chow | R. Miles | R. H. Miles | M. Young
[1] D. Chow,et al. Atomic antimony for molecular beam epitaxy of high quality III–V semiconductor alloys , 1996 .
[2] Jerry R. Meyer,et al. Recombination lifetime in InAs–Ga1−xInxSb superlattices , 1994 .
[3] Joel N. Schulman,et al. Infrared optical characterization of InAs/Ga1−xInxSb superlattices , 1990 .
[4] Arthur C. Gossard,et al. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb , 1996 .
[5] R. Wagner,et al. Determination of band gap and effective masses in InAs/Ga1−xInxSb superlattices , 1992 .
[6] Christian Mailhiot,et al. Long‐wavelength infrared detectors based on strained InAs–Ga1−xInxSb type‐II superlattices , 1989 .
[7] D. Chow,et al. High structural quality Ga1−xInxSb/InAs strained‐layer superlattices grown on GaSb substrates , 1992 .
[8] Herbert Kroemer,et al. Far-infrared photoresponse of the InAs/GaInSb superlattice , 1991 .
[9] Darryl L. Smith,et al. Proposal for strained type II superlattice infrared detectors , 1987 .