Fabrication and electrical characteristics of polymer-based Schottky diode

Abstract Metal/polymer Schottky diodes have been fabricated using spin-coated poly(3,4-ethylenedioxythiophene) (PEDT) doped with poly(styrenesulfonate) (PSS) as the p-type semiconductor and aluminum as the metal. The current–voltage and capacitance–voltage characteristics have been studied at room temperature. The breakdown voltage and rectification ratio of the Al/PEDT Schottky diode are about 5.5 V and 1.3×10 4 , respectively. A modified Norde function combined with conventional forward I – V method was used to extract the parameters including barrier height, rectification ratio, ideality factor, as well as the series resistance. This new method allows extraction of device characteristics from measured I – V curve that deviates from ideal I – V curve caused by series resistance.