Static noise margin of the full DG-CMOS SRAM cell using bulk FinFETs (Omega MOSFETs)
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S.Y. Han | J.H. Jeong | H.S. Kang | D.Y. Lee | S.W. Lee | B.Y. Nam | O.I. Kwon | T. Park | H.J. Cho | J.D. Choe | S.-M. Jung | J.N. Han | M.C. Chae | G.S. Yeo | D. Park | K. Kim | E. Yoon | J.H. Lee