论文信息 - Excitation of the 4f-electron of Pr3+ in GaAs: Pr and AlxGa1-xAs: Pr

Excitation of the 4f-electron of Pr3+ in GaAs: Pr and AlxGa1-xAs: Pr

The luminescence intensity of Pr3+ varies dramatically with the Al mole fraction in Pr-implanted AlxGa1-xAs. Two groups of major luminescence peaks have been observed near 1.6 and 1.3 μm, which can be attributed to the transitions of 3F3 → 3H4 and 1G4 → 3H5 of Pr3+, respectively. For GaAs, the luminescence peak intensity near 1.3 μm is strong and the peak intensity near 1.6 μm is weak, whereas the opposite has generally been observed for AlxGa1-xAs. Furthermore, only Al0.15Ga0.85As shows very strong luminescence peaks near 1.6 μm. This may be explained with a proposed excitation model for the 4f-electron of Pr3+ in AlxGa1-xAs.

Y. Yeo | R. Hengehold | P. Thee | G. S. Pomrenke

[1] I. V. Mitchell,et al. Photoluminescence spectra of trivalent praseodymium implanted in semi‐insulating GaAs , 1993 .

[2] K. Evans,et al. Erbium complexes and defect levels in MBE-grown erbium-doped GaAs and AlGaAs , 1993 .

[3] C. E. Stutz,et al. Molecular‐beam epitaxial growth and characterization of erbium‐doped GaAs and AlGaAs , 1992 .

[4] H. Nakagome,et al. Electrical properties of ytterbium‐doped InP grown by metalorganic chemical vapor deposition , 1988 .

[5] W. Haydl,et al. Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaP , 1986 .

[6] V. M. Konnov,et al. Defects and Optically Active Transition and Rare Earth Elements in III-V and II-VI Semiconductors and Diamond , 1986 .

[7] D. Elsaesser,et al. Annealing Studies of Er-Implanted GaAs and the Excitation Mechanism of Er in GaAs , 1993 .

[8] Y. Yeo,et al. Near Ir Emissions from Er, Tm, AND Pr Implanted GaAs and AlGaAs , 1990 .

[9] Robert A. Satten,et al. Spectra and energy levels of rare earth ions in crystals , 1968 .