Explicit Compact Surface-Potential and Drain-Current Models for Generic Asymmetric Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

In this paper, explicit surface potentials for undoped asymmetric-double-gate (a-DG) metal–oxide–semiconductor field-effect transistors (MOSFETs) suitable for compact model development are presented for the first time. The model is physically derived from Poisson's equation in each region of operation and adopted in a unified regional approach. The proposed model is physically scalable with oxide/channel thicknesses and has been verified with generic implicit solutions for independent gate biases as well as for different gate/oxide materials. The model is extendable to silicon-on-insulator (SOI) and symmetric-DG (s-DG) MOSFETs. Finally, a continuous, explicit drain-current equation has been derived on the basis of the developed explicit surface-potential solutions.

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