Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs

We studied the permanent effects of heavy-ion strikes on decananometer triple-gate SOI devices. We highlighted the role of the geometry and the three-dimensional architecture in the response to heavy ions. Heavy-ion strikes in state-of-the-art Triple-Gate FETs may have measurable permanent effects, due to microdose in the buried oxide, breakdown of the gate oxide, or interface state generation in the side oxide/body interface. This last effect is particularly interesting since it is related to the verticality of multigate transistors.

[1]  P. Garnier,et al.  Total dose failures in advanced electronics from single ions , 1993 .

[2]  Alessandro Paccagnella,et al.  Ionizing radiation induced leakage current on ultra-thin gate oxides , 1997 .

[3]  I. Eisele,et al.  Influence of soft breakdown on NMOSFET device characteristics , 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

[4]  A. Candelori,et al.  Heavy ion irradiation of thin gate oxides , 2000 .

[5]  D. Bisello,et al.  SIRAD: AN IRRADIATION FACILITY AT THE LNL TANDEM ACCELERATOR FOR RADIATION DAMAGE STUDIES ON SEMICONDUCTOR DETECTORS AND ELECTRONIC DEVICES AND SYSTEMS , 2001 .

[6]  peixiong zhao,et al.  Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics , 2001 .

[7]  Marc Porti,et al.  Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy , 2002 .

[8]  P. Dodd,et al.  Radiation effects in SOI technologies , 2003 .

[9]  C.R. Cleavelin,et al.  Body effect in tri- and pi-gate SOI MOSFETs , 2004, IEEE Electron Device Letters.

[10]  You-Seung Jin,et al.  Negative bias temperature instability in triple gate transistors , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

[11]  Seung Hwan Lee,et al.  Large scale integration and reliability consideration of triple gate transistors , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[12]  L. Tosti,et al.  Charge enhancement effect in NMOS bulk transistors induced by heavy ion Irradiation-comparison with SOI , 2004, IEEE Transactions on Nuclear Science.

[13]  J. Jomaah,et al.  Coupling effects and channels separation in FinFETs , 2004 .

[14]  A. Mercha,et al.  Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs , 2004, IEEE Transactions on Nuclear Science.

[15]  Eddy Simoen,et al.  Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation , 2004 .

[16]  Electrical stresses on ultra-thin gate oxide SOI MOSFETs after irradiation , 2005, IEEE Transactions on Nuclear Science.

[17]  G. Ghibaudo,et al.  Review on high-k dielectrics reliability issues , 2005, IEEE Transactions on Device and Materials Reliability.

[18]  G. Knoblinger,et al.  Radiation Dose Effects in Trigate SOI MOS Transistors , 2006, IEEE Transactions on Nuclear Science.

[19]  Jean-Pierre Colinge,et al.  Dose radiation effects in FinFETs , 2006 .

[20]  Paul Leroux,et al.  Comparison of the radiation behavior of 65 nm fully depleted Silicon-on-Insulator MOSFETs employing different tensile-strain-inducing techniques , 2006 .

[21]  Sorin Cristoloveanu,et al.  High tolerance to total ionizing dose of Ω-shaped gate field-effect transistors , 2006 .

[22]  B. Kaczer,et al.  Impact of Heavy-Ion Strikes on Minimum-Size MOSFETs With Ultra-Thin Gate Oxide , 2006, IEEE Transactions on Nuclear Science.

[23]  B. Ghyselen,et al.  Performance Enhancement of MUGFET Devices Using Super Critical Strained-SOI (SC-SSOI) and CESL , 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

[24]  Sorin Cristoloveanu,et al.  Lateral coupling and immunity to substrate effect in ΩFET devices , 2006 .

[25]  O. Faynot,et al.  Total Ionizing Dose Effects on Triple-Gate FETs , 2006, IEEE Transactions on Nuclear Science.

[26]  N. Collaert,et al.  Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices , 2007, IEEE Transactions on Nuclear Science.

[27]  R. Rooyackers,et al.  Multi-gate devices for the 32nm technology node and beyond , 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

[28]  R. Harboe-Sorensen,et al.  Angular Dependence of Heavy Ion Effects in Floating Gate Memory Arrays , 2007, IEEE Transactions on Nuclear Science.

[29]  E. Simoen,et al.  Effects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques , 2007, IEEE Transactions on Nuclear Science.

[30]  J.A. Felix,et al.  Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion Irradiation , 2007, IEEE Transactions on Nuclear Science.

[31]  Rita Rooyackers,et al.  Multi-gate devices for the 32 nm technology node and beyond , 2008 .

[32]  B. Kaczer,et al.  Reliability issues in MuGFET nanodevices , 2008, 2008 IEEE International Reliability Physics Symposium.