论文信息 - Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor - 字舞流文

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor

Lothar Frey | Heiner Ryssel | Albena Paskaleva | Anton J. Bauer | Stefan Zürcher | Martin Lemberger | H. Ryssel | L. Frey | M. Lemberger | A. Bauer | S. Zürcher | A. Paskaleva

[1] Lothar Frey,et al. Electrical characterization and reliability aspects of Zirconium Silicate films obtained from novel MOCVD precursors , 2004 .

[2] Lothar Frey,et al. Zirconium silicate films obtained from novel MOCVD precursors , 2003 .

[3] J. Kim,et al. Current transport in metal/hafnium oxide/silicon structure , 2002, IEEE Electron Device Letters.

[4] N. Spencer,et al. New Single-Source Precursors for the MOCVD of High-κ Dielectric Zirconium Silicates to Replace SiO2 in Semiconducting Devices , 2002 .

[5] John Robertson,et al. Electronic structure and band offsets of high-dielectric-constant gate oxides , 2002 .

[6] R. Wallace,et al. High-κ gate dielectrics: Current status and materials properties considerations , 2001 .

[7] Chenming Hu,et al. MOS capacitance measurements for high-leakage thin dielectrics , 1999 .

[8] M. Heyns,et al. Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures , 1995 .