Fabrication of TaN-gated ultra-thin MOSFETs (EOT <1.0 nm) with HfO/sub 2/ using a novel oxygen scavenging process for sub 65 nm application
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Changhwan Choi | Chang Yong Kang | Se Jong Rhee | M.S. Abkar | S.A. Krishna | Manhong Zhang | Hyungseob Kim | Tackhwi Lee | Feng Zhu | Injo Ok | S. Koveshnikov | J.C. Lee | Manhong Zhang | C. Kang | I. Ok | J.C. Lee | S. Koveshnikov | F. Zhu | C. Choi | S. Krishna | S. Rhee | M. Abkar | Hyung-Jung Kim | Tackhwi Lee