论文信息 - Thin sol–gel SiO2–SnOx–AgOy films for low temperature ammonia gas sensor

Thin sol–gel SiO2–SnOx–AgOy films for low temperature ammonia gas sensor

Abstract Thin SiO 2 –SnO x –AgO y films were prepared, up to 60–100 nm thick, by means of the sol–gel technology and characterized by a variety of analytical techniques. It is shown that the films have an amorphous structure with an inclusion of crystallites of Ag and Sn oxides. The conductance of the films is rather sensitive to the presence of NH 3 impurity in air at lower operating temperatures in the range of 20–50 °C.

[1] Tong Maosong,et al. Surface modification of oxide thin film and its gas-sensing properties , 2001 .

[2] C. Liu,et al. Properties and mechanism study of Ag doped SnO2 thin films as H2S sensors , 1997 .

[3] S. Akbar,et al. Solid‐State Gas Sensors: A Review , 1992 .

[4] S. Morrison,et al. Semiconductor gas sensors , 1985 .

[5] N. Bârsan,et al. Conduction Model of Metal Oxide Gas Sensors , 2001 .

[6] Zhen-Lai Zhou,et al. Ammonia-sensing characteristics of Pt and SiO2 doped SnO2 materials , 2001 .

[7] K. Zakrzewska,et al. Mixed oxides as gas sensors , 2001 .

[8] Sudipta Seal,et al. Inverse-catalyst-effect observed for nanocrystalline-doped tin oxide sensor at lower operating temperatures , 2005, Sensors and Actuators B: Chemical.

[9] J. Portier,et al. Relationships between optical band gap and thermodynamic properties of binary oxides , 2001 .

[10] J. T. Ranney,et al. The Surface Science of Metal Oxides , 1995 .

[11] U. Weimar,et al. Understanding the fundamental principles of metal oxide based gas sensors; the example of CO sensing with SnO2 sensors in the presence of humidity , 2003 .