Non-volatile memory device and multi-page programming, reading and copyback programming method thereof

A nonvolatile memory device and a multi-page programming, reading and copyback programming methods thereof are provided to program, read and copyback program a memory cell connected to an even bit line and a memory cell connected to an odd bit line in one page at the same time, by using a multi-plane structure. A cell array has memory cells connected to word lines and bit lines, respectively. A plurality of even page buffers(PBe) is connected to even bit lines, respectively, through even sensing lines. A plurality of odd page buffers(PBo) is connected to odd bit lines, respectively, through odd sensing lines separated from the even sensing lines. Each of the even and odd page buffers receives data to be programmed, and programs the data in even/odd memory cells connected to one word line at the same time.