Thermoelectric properties of boron-carbide thin film and thin film based thermoelectric device fabricated by intense-pulsed ion beam evaporation
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Kiyoshi Yatsui | Weihua Jiang | Syunsuke Sasaki | Masatoshi Takeda | Hisayuki Suematsu | Tsuneo Suzuki | H. Suematsu | Weihua Jiang | K. Yatsui | M. Takeda | Keisuke Yokoyama | Takahiro Miura | Tsuneo Suzuki | K. Yokoyama | Syunsuke Sasaki | Takahiro Miura
[1] D. Emin,et al. Conduction mechanism in boron carbide , 1984 .
[2] H. K. Charles,et al. Electrical properties of carbon-doped amorphous boron films☆ , 1976 .
[3] M. Takeda,et al. Thermoelectric properties of some metal borides , 2004 .
[4] G. Ramseyer,et al. Characterization of boron carbide thin films fabricated by plasma enhanced chemical vapor deposition from boranes , 1992 .
[5] Tsuneo Suzuki,et al. Thermoelectric properties of crystallized boron carbide thin films prepared by ion-beam evaporation , 2002 .
[6] Kiyoshi Yatsui,et al. Preparation and characteristics of ZnS thin films by intense pulsed ion beam , 1988 .
[7] Kiyoshi Yatsui,et al. Industrial applications of pulse power and particle beams , 1989 .
[8] F. Thévenot,et al. The correlation between the thermoelectric properties and stoichiometry in the boron carbide phase B4C-B10.5C , 1985 .
[9] K. Ebihara,et al. Preparation of boron carbide thin film by pulsed KrF excimer laser deposition process , 2002 .