High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform.

A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 μm wavelength. In addition, open eye diagrams at 54 Gb/s are observed. These results promise high speed applications using a novel full-functionality photonic platform on silicon.

[1]  J. Bowers,et al.  III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects , 2010 .

[2]  Y. Miyamoto,et al.  Uni-traveling-carrier photodiodes , 1997, 1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).

[3]  J. Campbell,et al.  Advances in Photodetectors and Optical Receivers , 2013 .

[4]  Andreas Beling,et al.  Heterogeneously integrated waveguide-coupled photodiodes on SOI with 12 dBm output power at 40 GHz , 2015, 2015 Optical Fiber Communications Conference and Exhibition (OFC).

[5]  Gunther Roelkens,et al.  Photonic integration in indium-phosphide membranes on silicon (IMOS) , 2014, Photonics West - Optoelectronic Materials and Devices.

[6]  D Van Thourhout,et al.  InP/InGaAs Photodetector on SOI Photonic Circuitry , 2010, IEEE Photonics Journal.

[7]  David J. Thomson,et al.  Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon , 2014, IEEE Journal of Selected Topics in Quantum Electronics.

[8]  John E. Bowers,et al.  40 GHz Si/Ge Uni-Traveling Carrier Waveguide Photodiode , 2014, Journal of Lightwave Technology.

[9]  M. Smit,et al.  Realization of efficient metal grating couplers for membrane-based integrated photonics. , 2015, Optics letters.

[10]  Yuqing Jiao,et al.  Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices. , 2014, Optics letters.

[11]  J. Campbell,et al.  Improved power conversion efficiency in high-performance photodiodes by flip-chip bonding on diamond , 2014 .

[12]  Changzheng Sun,et al.  Analysis of frequency response of high power MUTC photodiodes based on photocurrent-dependent equivalent circuit model. , 2015, Optics express.

[13]  F van Dijk,et al.  170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits. , 2012, Optics express.

[14]  van Pj René Veldhoven,et al.  Ultra-thin DVS-BCB adhesive bonding of III-V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate , 2013 .

[15]  H. Zimmermann,et al.  Zero-bias 40Gbit/s germanium waveguide photodetector on silicon. , 2012, Optics express.

[16]  L. Anderson,et al.  High-speed photodetectors. , 1966, Applied optics.

[17]  Mk Meint Smit,et al.  Vertical and Smooth Single-Step Reactive Ion Etching Process for InP Membrane Waveguides , 2015 .

[18]  Mk Meint Smit,et al.  First Demonstration of an Electrically Pumped Laser in the InP Membrane on Silicon Platform , 2015 .

[19]  D. Knoll,et al.  High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode. , 2015, Optics express.

[20]  G. Roelkens,et al.  A low-resistance spiking-free n-type ohmic contact for InP membrane devices , 2014, 26th International Conference on Indium Phosphide and Related Materials (IPRM).

[21]  M. Smit,et al.  Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices , 2015 .

[22]  D. Thomson,et al.  Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon , 2014 .

[23]  T. Okumura,et al.  GaInAsP/InP Membrane Lasers for Optical Interconnects , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[24]  J. Bowers,et al.  Hybrid Silicon Photonic Integrated Circuit Technology , 2013, IEEE Journal of Selected Topics in Quantum Electronics.