Equivalent circuit modeling of static substrate thermal coupling using VCVS representation
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J. S. Brodsky | R. Fox | T. Smy | D. Walkey | R. G. Dickson | D. Zweidinger
[1] Paul R. Strickland. The Thermal Equivalent Circuit of a Transistor , 1959, IBM J. Res. Dev..
[2] R. H. Winkler. Thermal properties of high-power transistors , 1967 .
[3] E. S. Schlig,et al. Thermal properties of very fast transistors , 1970 .
[4] D. H. Pontius,et al. Second breakdown and damage in junction devices , 1973 .
[5] R. P. Arnold,et al. A quantitative study of emitter ballasting , 1974 .
[6] Sang-Gug Lee,et al. Compact modeling of BJT self-heating in SPICE , 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[7] Wen-Chau Liu,et al. Temperature dependences of current gains in GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors , 1993 .
[8] Burhan Bayraktaroglu,et al. Theoretical calculations of temperature and current profiles in multi-finger heterojunction bipolar transistors , 1993 .
[9] S. Nelson,et al. Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities , 1993 .
[10] L. Deferm,et al. Experimental determination of self-heating in submicrometer MOS transistors operated in a liquid-helium ambient , 1993, IEEE Electron Device Letters.
[11] P. Baureis,et al. Electrothermal modeling of multi-emitter heterojunction-bipolar-transistors (HBTs) , 1994, Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits.
[12] L. L. Liou,et al. Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers , 1994 .
[13] Christopher M. Snowden,et al. Analysis of thermal instability in multi-finger power AlGaAs/GaAs HBT's , 1996 .
[14] Robert Fox,et al. Thermal impedance extraction for bipolar transistors , 1996 .
[15] William Redman-White,et al. Impact of self-heating and thermal coupling on analog circuits in SOI CMOS , 1998 .
[16] D. J. Walkey,et al. Extraction and modelling of thermal behavior in trench isolated bipolar structures , 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).
[17] Hans-Martin Rein,et al. Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage , 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).
[18] D. J. Walkey,et al. A simulation study of IC layout effects on thermal management of die attached GaAs ICs , 2000 .
[19] D. J. Walkey,et al. A scalable thermal model for trench isolated bipolar devices , 2000 .
[20] Tom J. Smy,et al. A 3D thermal simulation tool for integrated devices-Atar , 2001, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..