Equivalent circuit modeling of static substrate thermal coupling using VCVS representation

A new method is described which allows substrate thermal coupling between active devices to be accurately represented in a circuit simulation environment. The method, based on a substrate thermal equivalent circuit containing resistors and voltage-controlled voltage sources, allows for exact representation of substrate thermal coupling at any number of evaluation points. The topology of the equivalent circuit and derivation of its coefficients is described, and application of the technique to inter- and intradevice thermal effects is illustrated. The method is applied with a simple self-heating compact model representation to a measured GaAs device characteristic exhibiting gain collapse, and is found to accurately predict electrothermal behavior.

[1]  Paul R. Strickland The Thermal Equivalent Circuit of a Transistor , 1959, IBM J. Res. Dev..

[2]  R. H. Winkler Thermal properties of high-power transistors , 1967 .

[3]  E. S. Schlig,et al.  Thermal properties of very fast transistors , 1970 .

[4]  D. H. Pontius,et al.  Second breakdown and damage in junction devices , 1973 .

[5]  R. P. Arnold,et al.  A quantitative study of emitter ballasting , 1974 .

[6]  Sang-Gug Lee,et al.  Compact modeling of BJT self-heating in SPICE , 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[7]  Wen-Chau Liu,et al.  Temperature dependences of current gains in GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors , 1993 .

[8]  Burhan Bayraktaroglu,et al.  Theoretical calculations of temperature and current profiles in multi-finger heterojunction bipolar transistors , 1993 .

[9]  S. Nelson,et al.  Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities , 1993 .

[10]  L. Deferm,et al.  Experimental determination of self-heating in submicrometer MOS transistors operated in a liquid-helium ambient , 1993, IEEE Electron Device Letters.

[11]  P. Baureis,et al.  Electrothermal modeling of multi-emitter heterojunction-bipolar-transistors (HBTs) , 1994, Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits.

[12]  L. L. Liou,et al.  Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers , 1994 .

[13]  Christopher M. Snowden,et al.  Analysis of thermal instability in multi-finger power AlGaAs/GaAs HBT's , 1996 .

[14]  Robert Fox,et al.  Thermal impedance extraction for bipolar transistors , 1996 .

[15]  William Redman-White,et al.  Impact of self-heating and thermal coupling on analog circuits in SOI CMOS , 1998 .

[16]  D. J. Walkey,et al.  Extraction and modelling of thermal behavior in trench isolated bipolar structures , 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).

[17]  Hans-Martin Rein,et al.  Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage , 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).

[18]  D. J. Walkey,et al.  A simulation study of IC layout effects on thermal management of die attached GaAs ICs , 2000 .

[19]  D. J. Walkey,et al.  A scalable thermal model for trench isolated bipolar devices , 2000 .

[20]  Tom J. Smy,et al.  A 3D thermal simulation tool for integrated devices-Atar , 2001, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..