Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics
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Nikolai N. Ledentsov | Victor M. Ustinov | James A. Lott | Dieter Bimberg | J. Lott | N. Ledentsov | V. Ustinov | Z. Alferov | D. Bimberg | Zh. I. Alferov
[1] S. Denbaars,et al. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces , 1993 .
[2] Nikolai N. Ledentsov,et al. 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition , 1999 .
[3] H. Sakaki,et al. Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .
[4] S. Mikhrin,et al. Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate , 1999, IEEE Photonics Technology Letters.
[5] Nikolai N. Ledentsov,et al. Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices , 2001 .
[6] Dieter Bimberg,et al. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers , 2001 .
[7] Nikolai N. Ledentsov,et al. Quantum dot heterostructures , 1999 .
[8] Serge Luryi,et al. Future Trends in Microelectronics , 1996 .
[9] J. M. Moison,et al. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs , 1994 .
[10] Ploog,et al. Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces. , 1991, Physical review letters.
[11] Mikhail V. Maximov,et al. Low threshold, large To injection laser emission from (InGa)As quantum dots , 1994 .
[12] I. Krestnikov,et al. Quantum dots formed by ultrathin insertions in wide-gap matrices , 2000 .
[13] Mikhail V. Maximov,et al. Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors , 2000 .
[14] Nikolai N. Ledentsov,et al. Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser , 1999 .
[15] Nikolai N. Ledentsov,et al. Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing , 1996 .
[16] A. Stintz,et al. The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures , 2000, IEEE Journal of Quantum Electronics.