论文信息 - Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs

Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs

Gate- and drain-lag phenomena are investigated in AlGaAs-InGaAs pseudomorphic HEMTs by comparing experimental transient and pulsed characteristics with simulated ones. A consistent interpretation for experimental data is provided, relying on the assumption that acceptor-like surface traps are present at the ungated surface between gate and source/drain contacts.

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