High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer
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Zhiyong Fan | Wei Wu | Chun-Wei Huang | Xiangheng Xiao | Wen-Wei Wu | Kai Zhang | Z. Fan | L. Liao | Chun-Wei Huang | Wen‐Wei Wu | Shanshan Chen | Wei Wu | Changzhong Jiang | Xuming Zou | Jingli Wang | Xiangheng Xiao | Kai Zhang | Shanshan Chen | Lei Liao | Jingli Wang | Qian Yao | Xuming Zou | Changzhong Jiang | Qian Yao
[1] Youngki Yoon,et al. How good can monolayer MoS₂ transistors be? , 2011, Nano letters.
[2] S. Lodha,et al. Schottky barrier heights for Au and Pd contacts to MoS2 , 2014 .
[3] J. Appenzeller,et al. High performance multilayer MoS2 transistors with scandium contacts. , 2013, Nano letters.
[4] E. Kim,et al. Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors , 2015, Scientific Reports.
[5] Seunghyun Lee,et al. Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2. , 2016, Nano letters.
[6] Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers. , 2014, ACS nano.
[7] Ning Lu,et al. HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalability. , 2013, ACS nano.
[8] G. Brocks,et al. Controlling the Schottky barrier at MoS 2/metal contacts by inserting a BN monolayer , 2015, 1501.02130.
[9] Gautam Gupta,et al. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. , 2014, Nature materials.
[10] Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. , 2014, Nature communications.
[11] B. Radisavljevic,et al. Mobility engineering and a metal-insulator transition in monolayer MoS₂. , 2013, Nature materials.
[12] P. Ye,et al. Performance Potential and Limit of MoS2 Transistors , 2015, Advanced materials.
[13] M. Kamalakar,et al. High-performance molybdenum disulfide field-effect transistors with spin tunnel contacts. , 2014, ACS nano.
[14] H.-S. Philip Wong,et al. Impact of fixed charge on metal-insulator-semiconductor barrier height reduction , 2011 .
[15] K. Tsukagoshi,et al. Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors. , 2013, Nano letters.
[16] Yunqi Liu,et al. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High‐Performance 2D Field Effect Transistors , 2016, Advanced materials.
[17] T. Taniguchi,et al. Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions. , 2015, Nano letters.
[18] Kaustav Banerjee,et al. High-performance MoS2 transistors with low-resistance molybdenum contacts , 2014 .
[19] Lei Liao,et al. Interface Engineering for High‐Performance Top‐Gated MoS2 Field‐Effect Transistors , 2014, Advanced materials.
[20] H. Wen,et al. Control of Schottky barriers in single layer MoS2 transistors with ferromagnetic contacts. , 2013, Nano letters.
[21] Wilman Tsai,et al. Chloride molecular doping technique on 2D materials: WS2 and MoS2. , 2014, Nano letters.
[22] Hao Wu,et al. Toward barrier free contact to molybdenum disulfide using graphene electrodes. , 2015, Nano letters.
[23] R. Wallace,et al. The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces. , 2014, Nano letters.
[24] Andre K. Geim,et al. Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.
[25] Lei Wang,et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. , 2015, Nature nanotechnology.
[26] Lei Liao,et al. Floating gate memory-based monolayer MoS2 transistor with metal nanocrystals embedded in the gate dielectrics. , 2015, Small.
[27] Min Ji Park,et al. Metal-insulator crossover in multilayered MoS2. , 2015, Nanoscale.
[28] Andre K. Geim,et al. The rise of graphene. , 2007, Nature materials.
[29] Andre K. Geim,et al. Two-dimensional atomic crystals. , 2005, Proceedings of the National Academy of Sciences of the United States of America.
[30] A. Radenović,et al. Single-layer MoS2 transistors. , 2011, Nature nanotechnology.
[31] F. Xiu,et al. Controllable Schottky Barriers between MoS2 and Permalloy , 2014, Scientific Reports.
[32] C. Han,et al. Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes , 2015, IEEE Electron Device Letters.
[33] J. Ho,et al. Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation. , 2015, Small.