Strained n-Channel FinFETs Featuring In Situ Doped Silicon – Carbon ( Si 1 − y C y ) Source and Drain Stressors With High Carbon Content
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Yee-Chia Yeo | Tsung-Yang Liow | Matthias Bauer | Ganesh S. Samudra | N. Balasubramanian | Y. Yeo | G. Samudra | N. Balasubramanian | T. Liow | M. Bauer | J. Spear | Jennifer Spear
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