Strained n-Channel FinFETs Featuring In Situ Doped Silicon – Carbon ( Si 1 − y C y ) Source and Drain Stressors With High Carbon Content

Phosphorus in situ doped Si1−y Cy films (SiC:P) with substitutional carbon concentration of 1.7% and 2.1% were selectively grown in the source and drain regions of double-gate 〈110〉-oriented (110)-sidewall FinFETs to induce tensile strain in the silicon channel. In situ doping removes the need for a hightemperature spike anneal for source/drain (S/D) dopant activation and thus preserves the carbon substitutionality in the SiC:P films as grown. A strain-induced IDsat enhancement of ∼15% and ∼22% was obtained for n-channel FinFETs with 1.7% and 2.1% carbon incorporated in the S/D, respectively.

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