论文信息 - Temperature dependence of electroluminescence and I–V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions - 字舞流文

Temperature dependence of electroluminescence and I–V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions

H. Ohno | F. Matsukura | Y. Ohno | I. Arata

[1] H. Ohno,et al. MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn)As , 2000 .

[2] D. K. Young,et al. Electrical spin injection in a ferromagnetic semiconductor heterostructure , 1999, Nature.

[3] H. Ohno,et al. Making nonmagnetic semiconductors ferromagnetic , 1998, Science.

[4] H. Ohno,et al. Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy , 1998 .

[5] H. Ohno,et al. Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As , 1998 .

[6] H. Ohno,et al. (Ga, Mn)As/GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam Epitaxy , 1997 .

[7] G. A. Prinz,et al. Spin‐Polarized Transport , 1995 .

[8] D. Coon,et al. Thermionic emission in silicon at temperatures below 30 K , 1984 .