Four‐wave mixing in semi‐insulating InP and GaAs using the photorefractive effect

The photorefractive effect has been observed for the first time in semi‐insulating InPe:Fe and GaAsCr. These materials are sensitive and versatile recording media for high bit rate parallel optical processing in the 0.8–1.8‐μm spectral region using injection lasers of milliwatt power levels.

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