Far‐infrared emission from two‐dimensional plasmons in AlGaAs/GaAs heterointerfaces

A modified dispersion formula describing two‐dimensional (2D) plasmons in AlGaAs/GaAs heterointerfaces was derived and its validity was experimentally checked by observation of the far‐infrared signal from grating coupled 2D plasmons in selectively doped AlGaAs/GaAs heterointerfaces. The plasmon resonance frequency shift towards higher energy observed by Hopfel et al. [Surf. Sci. 113, 118 (1982)] can be explained by our present dispersion formula.