A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
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G. Meneghesso | S. Decoutere | M. Van Hove | E. Zanoni | G. Borghs | J. Das | F. Medjdoub | T. Kauerauf | R. Mertens | D. Marcon | S. Decoutere | R. Mertens | G. Borghs | T. Kauerauf | G. Meneghesso | F. Medjdoub | E. Zanoni | M. Leys | J. Das | M. Van Hove | P. Srivastava | D. Marcon | K. Cheng | P. Srivastava | K. Cheng | M. Leys
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